In a press release, Samsung announced to have developed a new technology named "through silicon via" (TSV) providing an innovative way to stack DRAM chips one over the other. With the TSV, Samsung can double the amount of RAM on a module without increasing the overall package size or the chips transistor density. Samsung claims that such modules can operate faster and use less power.
While it gives the possibility to offer 4GB DDR2 RAM module with the package size of the current 2GB module, it also gives a new way to increase the amount of RAM in devices where available space is the key and critical factor (handheld, etc...). In addition, such technology is cheaper than increasing the density of transistor in RAM chips, as the latter involves reducing the size of circuitry.
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